| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device and the manufacturing method thereof which has the wiring layers using low-permittivity insulation films and intends to reduce its wiring faults. <P>SOLUTION: The manufacturing method has a process for laminating one or more wiring layers (1, 3) using low-permittivity insulation films having buried wirings (2), a process for forming a groove or a hole (12) bridging over the respective wiring layers, a process for subjecting the respective wiring layers having the formed groove or the formed hole to heat treatments, and a process for burying a buried material (13) in the groove or the hole. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p> |
