| 摘要 |
<P>PROBLEM TO BE SOLVED: To manufacture an SOI wafer having an SOI layer, having a high crystal quality and a desired thickness, using epitaxial growth technology. <P>SOLUTION: A first mask 2 is deposited on the surface of a silicon substrate 1, and then a first window 3 is formed in the mask 2 make the surface of the silicon substrate 1 exposed. Thereafter, an insulating second mask 4 is formed, and then a second window 5 is formed in the mask 4 in the first window 3 to expose the uninterrupted surface of the silicon substrate 1. Then, a semiconductor is deposited grown epitaxially from the surface of the substrate exposed in the second window 5 to fill up the second window 5 and the first window 3 with an epitaxial layer 6. With the first mask 2 as a polishing stopper, the epitaxial layer 6 is polished to form the SOI layer 7. The thickness of the SOI layer 7 is the difference between the total thickness of the first mask 2 and the second mask 4 at the outside the first window 3 and the thickness of the second mask 4 at the inside the first window 3. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
