| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of fabricating an active region of a semiconductor light emitting device. <P>SOLUTION: The active region includes barrier layers 11, 13, 15, and 17, which are separated from each other respectively by quantum well layers 12, 14, and 16. The method of fabricating the active region comprises the steps of annealing the barrier layers 11, 13, 15, and 17 separately. The barrier layers 11, 13, 15, and 17 are subjected to annealing after the barrier layers 11, 13, 15, and 17 are grown and before the other layer is grown on the barrier layer. The device that is grown through this method has a much higher optical output power than that manufactured through a conventional manufacturing process having a single annealing step. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
