| 摘要 |
PROBLEM TO BE SOLVED: To improve a source-to-drain leak of an MOSFET caused by stress in bonding. SOLUTION: A contact hole 29 which exposes a source region 27 is formed in an interlayer insulating film 28 covering a gate electrode 25 and a source region 27 on an n<SP>+</SP>type semiconductor substrate 21 wherein a plurality of longitudinal MOSFETs 210 are formed, and the contact hole 29 is filled with a conductor plug 31 via a barrier metal film 30. A source wiring 32 formed of AlSiCu is formed on the interlayer insulating film 28 via the barrier metal film 30, and the source wiring 32 is electrically connected to the source region 27 via the conductor plug 31 and the barrier metal film 30. The conductor plug 31 is put so that a level differenceΔt between an opening upper end of the contact hole 29 and a top of the conductor plug 31 is at least the thickness of the barrier metal film 30 and the contact hole 29 is entirely filled with the source wiring 32. COPYRIGHT: (C)2005,JPO&NCIPI |
