发明名称 METHOD FOR FORMING PATTERN
摘要 PROBLEM TO BE SOLVED: To form a pattern by applying a lift-off method to a temperature condition which is higher than conventional conditions. SOLUTION: A method comprises steps of forming an lower-layer resin film 102 having a lower opening 112, and an upper layer resin film 103 having an upper opening 113, by using two kinds of polyimide having different solubilities, with the lower opening 112 having a larger area than the upper opening 113; depositing an inorganic film 105 on the resultant and forming at the same time an inorganic pattern 115; and removing the inorganic film 105, by making the lower layer resin film 102 and the upper layer resin film 103 dissolve in a predetermined solvent. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005136334(A) 申请公布日期 2005.05.26
申请号 JP20030372950 申请日期 2003.10.31
申请人 NIPPON TELEGR & TELEPH CORP <NTT> 发明人 TAKAHASHI MITSUTOSHI;TSUCHIZAWA YASUSHI
分类号 G03F7/26;H01L21/306;H01L21/3065;(IPC1-7):H01L21/306 主分类号 G03F7/26
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