METHOD FOR MANUFACTURING COMPOUND SEMICONDUCTOR EPITAXIAL SUBSTRATE

摘要

Disclosed is a method for manufacturing a compound semiconductor epitaxial substrate with few hollow defects. The method for manufacturing a compound semiconductor epitaxial substrate comprises a step for epitaxially growing an InGaAs layer on an InP single crystal substrate or on a layer lattice-matched to the InP single crystal substrate at a V/III ratio of 10-100, a growth temperature of 630-700˚C and a growth rate of 0.6-2 mum/h.