| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a manufacturing method of a low-resistance n-type semiconductor diamond doped with lithium and nitrogen, and the n-type semiconductor diamond. <P>SOLUTION: In the manufacturing method of the n-type semiconductor diamond, the diamond is synthesized through vapor-phase synthesis on a substrate using a microwave plasma CVD apparatus. Here, Li and N are added as impurity elements during the synthesis of the diamond. Li (dpm) is used as an Li source and is preferably sublimed and introduced into the microwave plasma CVD apparatus. Preferably, the pressure inside the microwave plasma CVD apparatus is ≥2.7 kPa and the temperature of the substrate is ≥700°C. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
