| 摘要 |
PROBLEM TO BE SOLVED: To provide a lithographic apparatus and a method of manufacturing a device, which allow manufacturing to be more speedily resumed after a time period of a flow rate lower than in a full-flow purge mode. SOLUTION: In a lithography apparatus using 157nm radiation, after a low-flow purge mode has been used, a projection beam is activated at low intensity and the intensity is monitored at a substrate level. When the intensity at the substrate level indicates that transmission on a beam path is restored to a normal value, it is decided that the resumption of exposure is safe. COPYRIGHT: (C)2005,JPO&NCIPI
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