发明名称 SUBSTRATE-PROCESSING EQUIPMENT
摘要 PROBLEM TO BE SOLVED: To provide substrate-processing equipment making in-plane uniformity enhanced by improving the thinness of the film thickness average at the central part of a wafer, with respect to a wafer installed especially in the upper part of a boat in the substrate processing equipment performing temperature control inside a processing chamber. SOLUTION: In the substrate processing equipment, there are provided a first temperature control for carrying out the operation of deflection between a set temperature value and a detected temperature control value and performing a calculation processing via an adder, and a second temperature control for presetting the electric power output value at a desired temperature in the processing chamber to be performed by the set output value. When the temperature becomes a desired temperature, switch over is made from the first temperature control to the second temperature control. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005136370(A) 申请公布日期 2005.05.26
申请号 JP20040044030 申请日期 2004.02.20
申请人 HITACHI KOKUSAI ELECTRIC INC 发明人 SUGISHITA MASASHI;UENO MASAAKI
分类号 H01L21/22;H01L21/31;(IPC1-7):H01L21/31 主分类号 H01L21/22
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