| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for activating impurities, by which the impurities existing at a deep position from the substrate surface of a semiconductor substrate, having the impurities added to its surface layer, is activated. SOLUTION: The method comprises a process of (a) irradiating the surface of the semiconductor substrate having the impurities added to its surface layer with a first pulse laser beam, and a process of (b) starting irradiating the surface of the semiconductor substrate with a second laser beam, during irradiation with the first laser beam in the process (a), or starting irradiating the surface of the semiconductor substrate with the second laser beam within 300 ns, from the time of finishing the irradiation with the first laser beam in the process (a). COPYRIGHT: (C)2005,JPO&NCIPI
|
