| 摘要 |
PROBLEM TO BE SOLVED: To form a titanium-based film low in chlorine concentration on a nickel-containing silicide region. SOLUTION: The titanium-based film forming method comprises a step (a) of forming a titanium-containing first conductive layer 107 on a nickel-containing silicide region 105 by using TiCl<SB>4</SB>, and a step (b) of forming a nitrogen/titanium-containing second conductive layer 109 on the first conductive layer 107. In the step of forming the second conductor layer 109 on the first conductive layer 107, one of a chlorine/titanium-containing titanium source substance and a nitrogen source substance is supplied as first supplies 113a, 113b, and 113c, and then the other of the source substances is supplied as second supplies 115a, 115b, and 115c. The first supplies 113a, 113b, and 113c and the second supplies 115a, 115b, and 115c are repeated alternately. COPYRIGHT: (C)2005,JPO&NCIPI
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