| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device having a gate insulating layer with a uniform film thickness and provided with a high breakdown voltage transistor capable of contriving the improvement of microfabrication and reliability, and to provide its manufacturing method. SOLUTION: The semiconductor device comprises a semiconductor layer 10, offset insulating layers 20b provided on the semiconductor layer 10 to mitigate an electric field provided on the semiconductor layer 10, gate insulating layers 60 comprising a thermal oxidation film formed through the thermal oxidation of a deposit semiconductor layer provided above the semiconductor layer 10, gate electrodes 70 provided above the gate insulating layers 60, and impurity layers 42, 52 provided on the semiconductor layers 10 and which become source or drain regions, while the offset insulating layers 20b are trench insulating layers. COPYRIGHT: (C)2005,JPO&NCIPI
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