| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing charge transfer device that can stably inject impurities to the bottom of an electrode and stabilize a potential gradient under the electrode. SOLUTION: The method for manufacturing a charge transfer device relates to a basic structure, and the charge transfer device is provided with a plurality of electrodes that are continuously arranged on a semiconductor substrate in a single layer manner with an insulating film in between. The method includes a step to form the insulating film on the semiconductor substrate, a step to deposit an electrode film on the insulating film, a step to form such a mask material on the electrode film that becomes a mask at least during formation of an electrode and has a gap of a specified width, a step to form a second mask material that is made integral with the first mask material and has the smaller gap of a specified width than the first mask material, and a step to etch the electrode by using the second mask material as a mask. COPYRIGHT: (C)2005,JPO&NCIPI
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