| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device insensitive to a change in the power voltage VDD of a semiconductor device, an error in a manufacturing process, and a change in temperature and enabling a quick data reading operation. SOLUTION: This device is provided with an FRP generator for generating FRP to sample data in response to a CSL enable signal, an FRP 1 generator for generating many FRP 1 within the enable section of an FRP signal in response to the FRP signal, and a voltage input/output sense amplifier for receiving a data value output from a memory cell, amplifying the data value in synchronization with a CSL signal, and sampling the data value in synchronization with the enable signal of the FRP 1. COPYRIGHT: (C)2005,JPO&NCIPI
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