发明名称 |
Method for improving a simulation model of photolithographic projection |
摘要 |
A method is provided for improving a photolithographic simulation model of the photolithographic simulation of a pattern formed on a photomask. Proceeding from a two-dimensional simulation model that takes account of the physical-chemical processes during lithography, a frequency-dependent intensity loss is calculated which is determined by multiplication of the simulated intensity distribution in the Fourier space by a filter function. An accurate calculation of the intensity distribution in the substrate plane is obtained. This method achieves the accuracy of three-dimensional models with a significantly shorter processing duration and is further suitable in particular for the calculation of OPC structures.
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申请公布号 |
US2005114823(A1) |
申请公布日期 |
2005.05.26 |
申请号 |
US20040995126 |
申请日期 |
2004.11.24 |
申请人 |
KUCHLER BERND;ZIEBOLD RALF;NOLSCHER CHRISTOPH |
发明人 |
KUCHLER BERND;ZIEBOLD RALF;NOLSCHER CHRISTOPH |
分类号 |
G03F1/00;G03F1/14;G03F1/36;G03F7/20;G05B17/00;G06F17/50;(IPC1-7):G06F17/50 |
主分类号 |
G03F1/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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