摘要 |
The present invention comprises an aluminum base material 2 constituting the plasma processing chamber of the plasma processing apparatus, a bonding layer 3 deposited on the base material consisting of a transition metal or transition metal alloy that modifies the difference in thermal expansion coefficient of the base material and the material constituting a plasma contact surface, and the plasma contact surface 1 formed of a material selected from a group consisting of La<SUB>2</SUB>O<SUB>3</SUB>, LaAlO<SUB>3</SUB>, MgLaAl<SUB>11</SUB>O<SUB>19</SUB>, and a mixture of La<SUB>2</SUB>O<SUB>3 </SUB>and Al<SUB>2</SUB>O<SUB>3 </SUB>being a metal oxide including at least La and O deposited on the bonding layer 3 via a thermal spray process.
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