| 摘要 |
1,001,158. Semi-conductor devices. LICENTIA PATENT-VERWALTUNGS G.m.b.H. Nov. 2, 1961, No. 39279/61. Heading H1K. A silicon or germanium body comprising a PN junction produced by alloying is etched and then subjected to a nitrogen atmosphere at a temperature of between 100‹ and 270‹ C. for a period between 1 and 30 minutes to stabilize the reverse current characteristic. The body may be washed in deionized or double distilled water after etching and may be temporarily exposed to oxygen after the nitrogen treatment. The body may then be covered with silicone varnish in the junction regions and subjected to further heat treatment between 280‹ and 300‹ C. for several hours. Heating may be effected by passing current through the body in the forward direction. |
