Organic thin film transistor comprising buffer layer

摘要

Disclosed herein is an organic thin film transistor comprising a substrate (1), a gate electrode (2), a gate insulating layer (3), an organic semiconductor layer (5), source-drain electrodes (4) and a protective layer (7) wherein a buffer layer (6) is interposed between the organic semiconductor layer (5) and the protective layer (7). Such a transistor minimizes the deterioration in the performance of the transistor due to ambient air containing oxygen and moisture, and the degeneration in the performance of the transistor caused during mounting a display device.