发明名称 |
VERTICALLY STACKED INTEGRATED CIRCUITS DEVICE COMPRISING MULTI-SUBSTRATES AND METHOD OF MANUFACTURING THE SAME |
摘要 |
Provided are a stacked integrated circuit device including multiple substrates and a method of manufacturing the same. A first integrated circuit substrate, a first integrated circuit formed on the first integrated circuit substrate, and a first passivation insulating layer are sequentially formed. Then, wafer bonding technique for forming an SOI substrate is used, thereby forming a second integrated circuit substrate on the first passivation insulating layer. While forming a second integrated circuit on the second integrated circuit substrate, at least one device-connecting interconnect electrically connects the first and second Integrated circuits and penetrates the second integrated circuit substrate and the first passivation layer. A second passivation insulating layer is formed on an upper surface of the second integrated circuit. |
申请公布号 |
KR20050049101(A) |
申请公布日期 |
2005.05.25 |
申请号 |
KR20030082974 |
申请日期 |
2003.11.21 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
CHOE, JEONG DONG;LEE, SUNG YOUNG;OH, CHANG WOO;PARK, DONG GUN |
分类号 |
H01L23/12;H01L21/762;H01L21/822;H01L25/065;H01L27/06;(IPC1-7):H01L23/12 |
主分类号 |
H01L23/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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