HOUSING FOR A POWER SEMICONDUCTOR MODULE WHICH IS RESISTANT TO HIGH VOLTAGES

摘要

The device has a housing partially filled with insulating material, a power semiconducting component covered by insulating material, a gas-filled volume bounded by an insulating material surface, first and second electrical supply leads fed through the gas-filled volume and into the insulating material and an arrangement for extending or eliminating a leakage path on the surface of the insulation material in a region between the supply leads. The device has a housing partially filled with insulating material (4), a power semiconducting component (7) covered by insulating material, a gas-filled volume (30) bounded by a surface (5) of insulating material, at least one first electrical supply lead (1) and a second supply lead (2) fed through the gas-filled volume and into the insulating material and an arrangement (34) for extending or eliminating a leakage path on the surface of the insulation material in a region between the first and second supply leads recessed into the surface.