| 摘要 |
The invention relates to an integrated circuit according to CMOS/BiCMOS technology and a method for producing the same. At least one integrated, photosensitive component and one electrical shield are provided, a second layer system (2; 3, 4) being applied to a photosensitive area (1) of the circuit (A) to be protected against an (unwanted) electrical coupling, said second layer system comprising a last layer (3) of a first sealing passivation layer system (5) according to the process, and a subsequent, transparent, electroconductive layer (4). Said layers have adjusted individual thicknesses (d3, d4) in order to obtain an optical thickness of the second layer system (2) having maximum transparency with a reduced thickness tolerance influence. |
