SEMICONDUCTOR CONSTRUCTIONS WITH GATED ISOLATION REGIONS HAVING INDIUM-DOPED SUB-REGIONS,申请号EP20030751923-传众专利搜索

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发明名称	SEMICONDUCTOR CONSTRUCTIONS WITH GATED ISOLATION REGIONS HAVING INDIUM-DOPED SUB-REGIONS
摘要
申请公布号	EP1532678(A2)	申请公布日期	2005.05.25
申请号	EP20030751923	申请日期	2003.08.25
申请人	MICRON TECHNOLOGY, INC.	发明人	LUAN, TRAN, C.
分类号	H01L21/765;H01L27/08;A44C7/00;H01L21/00;H01L21/28;H01L21/3205;H01L21/336;H01L21/4763;H01L21/82;H01L21/8234;H01L21/8238;H01L21/8242;H01L21/84;H01L27/088;H01L27/10;H01L27/105;H01L27/108;H01L29/10;H01L29/49;H01L29/78;H01L31/062;H01L31/113;(IPC1-7):H01L21/765	主分类号	H01L21/765
代理机构		代理人
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