LIGHT-EMITTING DIODE AND SEMICONDUCTOR LIGHT-EMITTING DEVICE

摘要

A light-emitting diode (1) is furnished with a semiconductor laminate (6), optically reflective layers (17) and (19), an optically reflective film (25), and a phosphorescent plate (27). The laminate (6) is formed by an n -type cladding layer (9), an active layer (11), a p -type cladding layer (13), and a p -type contact layer (15), laminated in order onto a substrate (7). The optically reflective layers (17) and (19) are provided respectively on the p -type contact layer (15) and on the back side (7b) of the substrate (7). The optically reflective film (25) is provided on three side surfaces of the laminate (6). The phosphorescent plate (27) is mounted on a side face, among the side faces of the laminate (6), on which there is no optically reflective film (25). Blue light ( L1 ) output from the active layer (11) is reflected at each of the optically reflective layers, and is gathered on the side face on which the phosphorescent plate (27) is provided. A portion of the blue light ( L1 ) turns into yellow light ( L2 ) in the phosphorescent plate (27), and white light derived from the blue light ( L1 ) and yellow light ( L2 ) is emitted.