Producing hard mask for semiconductor structure involves providing structured mask layer on hard mask layer, ion implantation, removing structured layer, structuring hard mask layer by selectively etching non-implanted or implanted region

摘要

The method involves providing a hard mask layer (5a,5b) on a semiconductor substrate (1), providing a structured mask layer (10') on the hard mask layer, carrying out at least one inclined ion implantations so that an implanted region (5b) lies at least partly under the structured mask layer and a non-implanted region (5a) under the structured layer is smaller than corresponding region of the structured layer, removing the structured layer and structuring the hard mask layer by selectively removing the non-implanted region or the implanted region by etching.