| 摘要 |
<p>A semiconductor device with integrated circuits includes superimposed layers provided at different levels on a substrate, and including a metal strip ( 3 ) formed in a reference layer and through which an electric current passes, a metal ground plane ( 4 ) formed in a layer situated at a level lower than the reference layer and having a slit ( 5 ) which lies below the strip while running alongside it, an electrostatic shield ( 6 ) formed in a layer located at a level lower than the ground plane and comprising a multiplicity of spaced out bands ( 7 ), made of an electrically-conducting material, that extends across the slit, and conducting junctions ( 4 a , 4 b) making it possible to electrically connect the ends of each band to the parts of the ground plane situated on either side of its slit.</p> |
