Method of reducing the conductivity of a semiconductor and devices made thereby

摘要

Disclosed is a method of reducing the conductivity/charge of a layer of group III-V semiconductor doped with Sn. The method includes the steps of: forming an region of SiO₂ on the semiconductor layer; annealing at least the semiconductor layer and the region of SiO₂ at a temperature sufficiently high to cause atoms of the Sn dopant to leach from the semiconductor layer into the region of SiO₂; and removing the region of SiO₂ after the annealing step is performed. The method can be used, for example, during the manufacture of HEMT, PHEMT, MESFET and HBT devices.