| 摘要 |
An integrated circuit having a high voltage lateral MOS with reduced ON resistance. In one embodiment, the integrated circuit includes a high voltage lateral MOS with an island formed in a substrate, a source, a gate and a first and second drain extension. The island is doped with a low density first conductivity type. The source and drain contact are both doped with a high density second conductivity type. The first drain extension is of the second conductivity type and extends laterally from under the gate past the drain contact. The second drain extension is of the second conductivity type and extends laterally from under the gate toward the source. A portion of the second drain extension overlaps the first drain extension under the gate to form a region of increased doping of the second conductivity type.
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