| 发明名称 |
Systems and methods using non-volatile memory cells |
| 摘要 |
Described in this disclosure is a non-volatile memory cell. The non-volatile memory cell generally includes a short-range atomic order substrate, a dielectric positioned adjacent to the substrate, and a non-floating gate positioned adjacent to the dielectric.
|
| 申请公布号 |
US6897506(B2) |
申请公布日期 |
2005.05.24 |
| 申请号 |
US20030460979 |
申请日期 |
2003.06.13 |
| 申请人 |
HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. |
发明人 |
VAN BROCKLIN ANDREW L.;JACKSON WARREN B. |
| 分类号 |
H01L21/77;H01L21/822;H01L21/84;H01L27/06;H01L27/12;H01L29/792;(IPC1-7):H01L27/108;H01L29/76;H01L29/94;H01L31/119 |
主分类号 |
H01L21/77 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
