发明名称 X-ray mask
摘要 In an x-ray absorber in accordance with the present invention, reduced transmittance of the x-ray absorber is suppressed while phase shift amount in the vicinity of pi-radians is achieved. For this purpose, a material is used that has a high transmittance per film thickness and contains an element with a high phase shift amount and an element with a low transmittance, as a material composition that forms the x-ray absorber. In other words, the transmittance of the x-ray absorber is mainly determined by the element with a low transmittance, and phase shift falling short of pi-radians is compensated with the element with a high transmittance and a high phase shift.
申请公布号 US6898267(B2) 申请公布日期 2005.05.24
申请号 US20020282208 申请日期 2002.10.29
申请人 MITSUBISHI DENKI KABUSHIKI KAISHA 发明人 WATANABE HIROSHI;KISE KOUJI;YABE HIDEKI
分类号 G03F1/00;G03F1/14;G03F1/16;G03F1/22;G03F1/68;G03F7/20;H01L21/027;(IPC1-7):G21K5/00 主分类号 G03F1/00
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