| 摘要 |
The present invention provides a system, apparatus and methodology for semiconductor device gate control utilizing a gate driver circuit 112 having opposing current inhibiting elements 130, 132 capable of controlling current flow until a predetermined voltage level is obtained across the current inhibiting element opposing the current flow. A difference of an isolated input voltage level and the predetermined voltage level approximates a gate voltage potential employed to drive a gate input of a semiconductor device. This is accomplished, in one instance of the present invention, by employing Zener diodes in an opposing fashion to produce the gate voltage potential. Zener diode breakdown voltages provide the predetermined voltage levels necessary to properly control the gated semiconductor device during gate charge and discharge cycles.
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