SOLID-STATE IMAGING DEVICE AND ITS MANUFACTURING METHOD

摘要

The crosstalk between adjacent pixels is prevented by a structure in which an overflow barrier is provided in a deep portion of a substrate. A local P-type region (150) is formed in a predetermined position in a lower layer region below a vertical transfer register (124) and a channel stop region (126). The potential in the lower layer region below the vertical transfer register (124) and the channel stop region (126) is controlled by the P-type region (150) so that the potential in the extent from the minimum potential position of the vertical transfer register (124) to the overflow barrier (128) in the lower layer region is lower than that in the lower layer region below a photosensor (122). Therefore, because the potential in the lower layer region below the vertical transfer register (124) and the channel-stop region (126) on both sides is low, the charge produced by the photoelectric transducing in the sensor region is blocked by this potential barrier and cannot diffuse easily. Thus, the crosstalk between adjacent pixels can be prevented.