发明名称 Image sensor and method for fabricating the same
摘要 A CMOS image sensor for improving a characteristic of transmittance therein is provided by forming a convex-shaped color filter pattern that acts as a micro-lens. The CMOS image sensor includes a semiconductor structure having a photodiode and a peripheral circuit, an insulating layer that is formed on the semiconductor structure and that has a trench, and a convex-shaped color filter pattern formed on the insulating layer and covering the trench.
申请公布号 US6897086(B2) 申请公布日期 2005.05.24
申请号 US20030688448 申请日期 2003.10.17
申请人 HYUNDAI ELECTRONICS INDUSTRIES 发明人 KIM CHAE-SUNG
分类号 G02B5/20;G02B3/00;H01L21/00;H01L27/14;H01L27/146;H01L29/06;H01L31/0232;H01L31/062;H01L31/113;H04N5/335;H04N5/369;H04N5/374;(IPC1-7):H01L21/00 主分类号 G02B5/20
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