发明名称 |
Image sensor and method for fabricating the same |
摘要 |
A CMOS image sensor for improving a characteristic of transmittance therein is provided by forming a convex-shaped color filter pattern that acts as a micro-lens. The CMOS image sensor includes a semiconductor structure having a photodiode and a peripheral circuit, an insulating layer that is formed on the semiconductor structure and that has a trench, and a convex-shaped color filter pattern formed on the insulating layer and covering the trench.
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申请公布号 |
US6897086(B2) |
申请公布日期 |
2005.05.24 |
申请号 |
US20030688448 |
申请日期 |
2003.10.17 |
申请人 |
HYUNDAI ELECTRONICS INDUSTRIES |
发明人 |
KIM CHAE-SUNG |
分类号 |
G02B5/20;G02B3/00;H01L21/00;H01L27/14;H01L27/146;H01L29/06;H01L31/0232;H01L31/062;H01L31/113;H04N5/335;H04N5/369;H04N5/374;(IPC1-7):H01L21/00 |
主分类号 |
G02B5/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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