发明名称 Semiconductor memory device used for cache memory
摘要 A data memory circuit having divided several cache lines storing data, and several entries, and a tag circuit, are provided. The tag circuit having an array of an associative memory including a memory cell circuit having several memory cells storing address corresponding to the data stored in the data memory circuit and divided several rows, and a comparator circuit comparing the address stored in the memory cell circuit with input address, the comparator circuit comparing the address stored in divided several rows of the memory cell circuit with the input address concurrently in each of divided rows storing the address, and generating a cache hit/miss determination signal based on the comparative result of each row, the hit/miss determination signal being supplied to the data memory circuit.
申请公布号 US6898100(B2) 申请公布日期 2005.05.24
申请号 US20030736849 申请日期 2003.12.17
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 KOHNO FUMIHIRO
分类号 G06F12/08;G11C11/41;G11C15/00;G11C15/04;(IPC1-7):G11C15/00 主分类号 G06F12/08
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