发明名称 |
Efficient and accurate sensing circuit and technique for low voltage flash memory devices |
摘要 |
An exemplary sensing circuit comprises a first transistor connected to a first node, where a target memory cell has a drain capable of being connected to the first node through a selection circuit during a read operation involving the target memory cell. The sensing circuit further comprises a decouple circuit which is connected to the first transistor. The decouple circuit includes a second transistor having a gate coupled to a gate of the first transistor. The decouple circuit further has a decouple coefficient (N) greater than 1. The drain of the second transistor is connected at a second node to a reference voltage through a bias resistor. With the arrangement, the drain of the second transistor generates a sense amp input voltage at the second node such that the sense amp input voltage is decoupled from the first node.
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申请公布号 |
US6898124(B1) |
申请公布日期 |
2005.05.24 |
申请号 |
US20030678446 |
申请日期 |
2003.10.03 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
WANG ZHIGANG;YANG NIAN;HE YUE-SONG |
分类号 |
G11C11/56;G11C16/06;G11C16/26;(IPC1-7):G11C16/06 |
主分类号 |
G11C11/56 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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