发明名称 |
P-type single crystal zinc-oxide having low resistivity and method for preparation thereof |
摘要 |
The present invention provides a low-resistivity p-type single-crystal zinc oxide. An n-type dopant and p-type dopant are doped into zinc oxide with higher concentration of the p-type dopant than that of the n-type dopant during forming a single-crystal of the zinc oxide through a thin film forming process. Further, an element of the second group is co-doped to allow oxygen to be stabilized.
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申请公布号 |
US6896731(B1) |
申请公布日期 |
2005.05.24 |
申请号 |
US20020048498 |
申请日期 |
2002.04.30 |
申请人 |
JAPAN SCIENCE AND TECHNOLOGY CORP. |
发明人 |
YAMAMOTO TETSUYA;YOSHIDA HIROSHI;YAO TAKAFUMI |
分类号 |
H01L21/363;C30B23/02;C30B25/02;C30B29/16;(IPC1-7):C30B23/00;C30B25/00;C01G9/02;B32B9/00 |
主分类号 |
H01L21/363 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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