| 摘要 |
A method of programming a flash memory through boosting a voltage level of a source line. The flash memory has n memory cell transistors cascaded in series, a local bit line positioned above the n memory cell transistors, a buried bit line positioned under the n memory cell transistors, and a source line positioned under the buried bit line. The method includes inputting a word line voltage to a control gate of a k<SUP>th </SUP>memory cell transistor, and after floating the local bit line, inputting a source line voltage to the source line for inducing an FN tunneling effect inside the k<SUP>th </SUP>memory cell transistor through capacitance coupling between the buried bit line and the source line.
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