| 摘要 |
In a method of manufacturing a semiconductor device by dividing a semiconductor wafer 6, on which a plurality of semiconductor elements are formed, into individual pieces of the semiconductor elements, after thickness of a reverse face of a circuit formation face 6 a is reduced by machining, a mask to determine cutting lines 31 b is formed by a resist film 31 a, and the semiconductor wafer 6 is divided into individual pieces of semiconductor elements 6 c by conducting plasma etching on portions of the cutting lines 31 b when plasma is exposed from the mask side, and then the resist film 31 a is removed by plasma, and further a micro-crack layer 6 b generated on the machined face is removed by plasma etching. A series of the above plasma processing is executed by the same plasma processing apparatus.
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