发明名称 Integrated circuit with reverse engineering protection
摘要 Technique and structures for camouflaging an integrated circuit structure. The integrated circuit structure is formed by a plurality of layers of material having controlled outlines and controlled thicknesses. A layer of dielectric material of a controlled thickness is disposed among said plurality of layers to thereby render the integrated circuit structure intentionally inoperable.
申请公布号 US6897535(B2) 申请公布日期 2005.05.24
申请号 US20030438689 申请日期 2003.05.14
申请人 HRL LABORATORIES, LLC;RAYTHEON CO 发明人 CHOW LAP-WAI;CLARK, JR. WILLIAM M.;BAUKUS JAMES P.
分类号 H01L23/58;H01L27/02;(IPC1-7):H01L29/76;H01L29/94;H01L31/062;H01L31/113;H01L31/119 主分类号 H01L23/58
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