METHOD FOR ADJUSTING EMISSION WAVELENGTH FROM InGaAs QUANTUM DOTS BY AlGaAs INSERTION LAYER,申请号KR20010088866-传众专利搜索

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发明名称	METHOD FOR ADJUSTING EMISSION WAVELENGTH FROM InGaAs QUANTUM DOTS BY AlGaAs INSERTION LAYER
摘要
申请公布号	KR100491073(B1)	申请公布日期	2005.05.24
申请号	KR20010088866	申请日期	2001.12.31
申请人		发明人
分类号	H01S5/30;(IPC1-7):H01S5/30	主分类号	H01S5/30
代理机构		代理人
主权项
地址

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