| 摘要 |
A solid-state image sensing device includes an image capture section which takes external light rays and generates information charge, and a storage section, which is shielded from external light rays, and contains a plurality of transfer electrodes arranged on a surface of a semiconductor substrate. The solid-state image sensing device transfers information charge by using the transfer electrodes. This solid-state image sensing device adopts diodes formed and buried beneath the vicinity of the transfer electrodes, as a result of which it has become possible to suppress the occurrence of dark current without decreasing the sensitivity and saturation power of the image sensor.
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