| 摘要 |
Single-crystalline silicon layers 7 a and 7 b are selectively formed on LDD layers 5 a and 5 b by an epitaxial growth method. Opening sections 10 a and 10 b are formed, which expose a source layer 8 and a drain layer 8 b, respectively, through an interlayer dielectric film 9 and the single-crystalline silicon layers 7 a and 7 b, respectively, and then, plugs 12 a and 12 b are formed in the opening sections 10 a and 10 b embedded through barrier metal films 11 a and 11 b, respectively.
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