NITRIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To emit light in a plurality of colors having different light emission wavelengths from the same active layer in a nitride semiconductor light-emitting device that comprises gallium nitride semiconductor layers formed on a heterogeneous substrate.

SOLUTION: A plurality of recesses 106 are formed by etch process on a first electrically conductive type (n-type) semiconductor layer 102 formed on a substrate with a buffer layer interposed between them. Each recess is exposed in plane orientations different from that of the major C plane. In this example, the plane orientation of A plane is exposed. An active layer is grown in connection with the plane of this plane orientation, bottom of the recess, and C-plane of the upper surface of a non-recess portion. A second electrically conductive type (p-type) semiconductor layer is formed on the inner surface of the recess. With the active layer formed contiguously to the semiconductor layer in two or more plane orientations, a difference in growth rate causes a difference in thickness across the quantum well (active layer), thereby providing light emission of a plurality of colors having different light emission wavelength peaks.

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