摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide an electrode pattern which can improve the properties of a photoelectric converter by reducing leakage current caused by a low quality region. <P>SOLUTION: In the photoelectric converter consisting of a semiconductor substrate or a semiconductor film, and an electrode; the semiconductor substrate or the semiconductor film has an in-plane distribution of quality defined by the life time and the diffusion length of a minority carrier. The quality distribution has a first semiconductor characteristic region represented as a peak at the long life time side of the minority carrier life time or as a peak at the long diffusion length side of the minority carrier diffusion length, and a second semiconductor characteristic region represented as a peak at the short life time side of the minority carrier life time or as a peak at the short diffusion length side of the minority carrier distribution length. A ratio of area of the first semiconductor characteristic region dominated by the electrode is smaller than a ratio of area of the second semiconductor characteristic region dominated by the electrode. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p> |