| 摘要 |
PROBLEM TO BE SOLVED: To improve the dielectric strength of wiring by preventing the diffusion of a wiring material in the wiring structure of a semiconductor device. SOLUTION: The wiring structure of the semiconductor device is formed with a first insulating film 101 having a plurality of grooves 102, a plurality of wiring films 105 formed to be protruded from the top surface of the first insulating film 101 formed between the grooves 102, and a plurality of barrier films 103 which are formed on bottom surfaces of the wiring films 105 and on side faces of the films 105 to levels higher than top surfaces of the films 105. The structure is also formed with first cap films 106 formed on the top surfaces of the wiring films 105 and composed of metallic films and second cap films 107 formed at least on side faces of the first cap films 106 and barrier films 103. COPYRIGHT: (C)2005,JPO&NCIPI |
