| 摘要 |
A semiconductor substrate is annealed after forming a trench in a semiconductor substrate and prior to forming a gate insulator film, at an annealing temperature T between 980° C. and 1150° C. in an atmosphere of a gas mixture containing a rare gas and hydrogen, in which the content of hydrogen is 1.3x10<SUP>-18 </SUP>exp(0.043T) % or lower in volume, to planarize the side wall of the trench and to round the corners of the trench at the curvature of 0.003 nm<SUP>-1 </SUP>or smaller. Alternatively, a semiconductor substrate with a trench formed therein is annealed prior to forming a gate insulator film, at an annealing temperature T between 980° C. and 1040° C. in an atmosphere of a gas mixture containing a rare gas and hydrogen, in which the content of hydrogen is 6.11x10<SUP>-14 </SUP>exp(0.0337T) % or higher in volume, to planarize the side wall of the trench but so as not to round the corners of the trench such that the curvature thereof is 0.006 nm<SUP>-1 </SUP>or higher. The manufacturing method according to the invention for manufacturing a semiconductor device having an insulated gate structure facilitates planarizing the gate insulator film forming region with fewer manufacturing steps and rounding the trench corners with excellent controllability.
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