发明名称 Method for producing a mask adapted to an exposure apparatus
摘要 An item of information about the respective positions ( 501, 502, 601, 602 ) of at least two structure elements ( 50, 60 ) on a mask is provided. The displacement of the positional positions during the imaging by the lens system of the exposure apparatus, the displacement being governed by lens aberration, is measured and correction values ( 540, 640 ) are determined for each of the structure elements. Using the correction values ( 540, 640 ) the positions ( 501, 502, 601, 602 ) are changed in order to form new positions ( 505, 506, 605, 606 ) of the structure elements ( 50, 60 ) in such a way that the aberration effects can be compensated for. A mask ( 40 ) adapted to the exposure apparatus is exposed with the structures at the changed positions. The variation in the positional accuracies and the structure width distributions which is governed by the aberration of lenses is advantageously reduced.
申请公布号 US2005106476(A1) 申请公布日期 2005.05.19
申请号 US20040965693 申请日期 2004.10.14
申请人 HASSMANN JENS;KOWALEWSKI JOHANNES;KUNKEL GERHARD;SCHEDEL THORSTEN;SCHRODER UWE P.;VOIGT INA 发明人 HASSMANN JENS;KOWALEWSKI JOHANNES;KUNKEL GERHARD;SCHEDEL THORSTEN;SCHRODER UWE P.;VOIGT INA
分类号 G03F7/20;(IPC1-7):G03F9/00;G03C5/00;G03B27/54;G03F1/08 主分类号 G03F7/20
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