发明名称 |
FinFETs having first and second gates of different resistivities, and methods of fabricating the same |
摘要 |
A fin field effect transistor (FinFET) includes a first gate and a second gate. The first gate has a vertical part that is defined by sidewalls of a silicon fin and sidewalls of a capping pattern disposed on the silicon fin and a horizontal part horizontally extends from the vertical part. The second gate is made of a low-resistivity material and is in direct contact with the horizontal part of the first gate. A channel may be controlled due to the first gate, and a device operating speed may be enhanced due to the second gate. Related fabrication methods also are described.
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申请公布号 |
US2005104096(A1) |
申请公布日期 |
2005.05.19 |
申请号 |
US20040937246 |
申请日期 |
2004.09.09 |
申请人 |
LEE DEOK-HYUNG;LEE BYEONG-CHAN;CHOI SI-YOUNG;JUNG IN-SOO |
发明人 |
LEE DEOK-HYUNG;LEE BYEONG-CHAN;CHOI SI-YOUNG;JUNG IN-SOO |
分类号 |
H01L21/28;H01L21/335;H01L21/336;H01L21/8238;H01L29/41;H01L29/423;H01L29/49;H01L29/78;H01L29/786;(IPC1-7):H01L21/332;H01L21/823;H01L29/76;H01L31/062 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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