发明名称 |
Wafer processing method |
摘要 |
A laser beam processing method for processing a wafer by applying a laser beam to a predetermined area, comprising the steps of forming a resin film which absorbs a laser beam, on the surface to be processed of the wafer; applying a laser beam to the surface to be processed of the wafer through the resin film; and removing the resin film after the laser beam application step.
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申请公布号 |
US2005106782(A1) |
申请公布日期 |
2005.05.19 |
申请号 |
US20040986371 |
申请日期 |
2004.11.12 |
申请人 |
GENDA SATOSHI;YOSHIKAWA TOSHIYUKI;OBA RYUGO;FURUTA KENJI;KITAHARA NOBUYASU |
发明人 |
GENDA SATOSHI;YOSHIKAWA TOSHIYUKI;OBA RYUGO;FURUTA KENJI;KITAHARA NOBUYASU |
分类号 |
B23K26/00;B23K26/18;B23K26/40;B23K101/40;H01L21/00;H01L21/301;H01L21/44;H01L21/78;(IPC1-7):H01L21/44 |
主分类号 |
B23K26/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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