PHASE CHANGE MEMORY ELEMENT WITH IMPROVED CYCLABILITY

摘要

The invention relates to a phase change memory element comprising, between two electric contacts (1, 2), a part (3) which is made of a memory material, presenting an amorphous to crystal phase change and vice-versa and is embodied in the form of an arrangement provided with a central area (3.1) situated between boundary areas (3.2, 3.3). An inert or quasi-inert interface (3.21, 3.31) is arranged between the active central area (3.1) and each passive extreme area (3.21, 3.31) made of a material whose melting point is higher than the material of the central active area (3.1). Said invention can be used for PC RAM memories.