| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a high efficiency light emitting device wherein defect density and stress distribution are easily controlled and light extracting efficiency is improved by limiting the surface crystal orientation of a substrate used for the light emitting device. <P>SOLUTION: The substrate is obtained wherein the control of the defect density and the control of the stress distribution are uniformly carried out by using the light emitting element that comprises the substrate including one or more curved-surface projections, even in the case that the growth of a semiconductor crystal layer and the light emitting element are completed, and also the light emitting element employing the substrate is obtained. Further, the light emitting device using this substrate is obtained. The extraction efficiency of light generated at the light emitting layer to the outside of the light emitting device can also be increased. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
